IPP045N10N3GXKSA1 vs IPP100N12S305AKSA1 Perbandingan

Perbandingan bersamaan detil IPP045N10N3GXKSA1 dari Infineon dan IPP100N12S305AKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IPP045N10N3GXKSA1 IPP100N12S305AKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IPP045N10N3GXKSA1 —
Technology OptiMOS 3 OptiMOS trench
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V<sub>DS</sub>) 100 V —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25°C 100 A —
Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=100°C [DATA_NEEDED: I_D at TC=100C] —
Pulsed Drain Current (I<sub>D,pulse</sub>) 137 A —
On-Resistance R<sub>DS(on)</sub> max at V<sub>GS</sub>=10V 4.5 mΩ —
Gate Threshold Voltage V<sub>GS(th)</sub> 3.5 V (typical, per LCSC listing) —
Power Dissipation P<sub>D</sub> at T<sub>C</sub>=25°C 214 W —
Paket TO-220-3 (PG-TO220-3) through-hole TO-220 (PG-TO220-3-1)
Rentang Suhu Kerja -55 °C to +175 °C (junction, typical MOSFET limit) —
Tipe Mounting Through Hole Through Hole
Status RoHS Compliant (per LCSC datasheet excerpt) —
Lead-Free Yes (Infineon G/GX part suffix) —
Level MSL N/A (through-hole package) —
Drain-Source Voltage (VDS) — 120 V
Continuous Drain Current (ID) at Tc — 100 A
Arus Kedip Pengecor — [DATA_NEEDED: pulsed ID value]
Maximum Power Dissipation (Ptot) at Tc — 300 W
Gate-Source Voltage (VGS) max — ±20 V
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) at VGS=10V]
Avalanche Energy, Single Pulse — [DATA_NEEDED: EAS]
Suhu Hubung Kerja — -55 °C to +175 °C
Jumlah Pin — 3
MSL Moisture Sensitivity Level — 1 (260 °C peak reflow)
Automotive Qualification — AEC-Q101 qualified
Avalanche Tested — 100% tested
RoHS Compliance — Compliant (Green product)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon