IPT030N12N3GATMA1 vs IQE018N06NM6CGATMA1 Perbandingan
Perbandingan bersamaan detil IPT030N12N3GATMA1 dari Infineon dan IQE018N06NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPT030N12N3GATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Channel Type | N-Channel | N-Channel |
| Configuration | Single | — |
| Maximum Drain-Source Voltage (VDS) | 120 V | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Maximum On-Resistance (RDS(on)) | 3 mΩ | — |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | — |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | — |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | — |
| Power Dissipation (PD) at Tc | 375 W (Tc) | — |
| Technology | OptiMOS 3 | Trench MOSFET, OptiMOS 6 |
| Suhu Hubung Kerja | -55 °C to +175 °C | — |
| Paket | PG-HSOF-8-1 (TOLL) | PG-TTFN-9-3 (TOLL/TTFN) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | — |
| Status RoHS | Compliant with Exemption | — |
| Channel Mode | Enhancement | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 60V |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| Rentang Suhu Kerja | — | -55C to +175C (junction) |
| RoHS Compliance | — | Compliant |