IPT030N12N3GATMA1 vs IQE018N06NM6CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT030N12N3GATMA1 sa pamamagitan ng Infineon at IQE018N06NM6CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT030N12N3GATMA1 - 120V 237A 3mΩ N-Channel OptiMOS 3 | Infineon
IPT030N12N3GATMA1 ✓ NakahandaInfineon
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT030N12N3GATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Channel Type | N-Channel | N-Channel |
| Configuration | Single | — |
| Maximum Drain-Source Voltage (VDS) | 120 V | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Maximum On-Resistance (RDS(on)) | 3 mΩ | — |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | — |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | — |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | — |
| Power Dissipation (PD) at Tc | 375 W (Tc) | — |
| Technology | OptiMOS 3 | Trench MOSFET, OptiMOS 6 |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-HSOF-8-1 (TOLL) | PG-TTFN-9-3 (TOLL/TTFN) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | — |
| Tindminan RoHS | Compliant with Exemption | — |
| Channel Mode | Enhancement | — |
| Level ng MSL | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 60V |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (junction) |
| RoHS Compliance | — | Compliant |