IPT030N12N3GATMA1 vs IQE018N06NM6CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT030N12N3GATMA1 disebabkan oleh Infineon dan IQE018N06NM6CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE018N06NM6CGATMA1 IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon

IQE018N06NM6CGATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPT030N12N3GATMA1 IQE018N06NM6CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Channel Type N-Channel N-Channel
Configuration Single —
Maximum Drain-Source Voltage (VDS) 120 V —
Maximum Gate-Source Voltage (VGS) 20 V —
Maximum Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Maximum On-Resistance (RDS(on)) 3 mΩ —
Continuous Drain Current (ID) at Ta 24 A (Ta) —
Pulsed Drain Current (IDM) at Tc 237 A (Tc) —
Power Dissipation (PD) at Ta 3.8 W (Ta) —
Power Dissipation (PD) at Tc 375 W (Tc) —
Technology OptiMOS 3 Trench MOSFET, OptiMOS 6
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan PG-HSOF-8-1 (TOLL) PG-TTFN-9-3 (TOLL/TTFN)
Jenis Pemasangan Surface Mount Surface Mount
Automotive Qualified Yes (per manufacturer datasheet) —
Status RoHS Compliant with Exemption —
Channel Mode Enhancement —
Aras MSL [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 6 60V
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, Tc) — 178 A
Continuous Drain Current (I_D, Ta) — 25 A
R_DS(on) max (V_GS=10 V) — 1.8 mΩ
Gate Threshold Voltage (V_GS(th)) — 3.3 V (logic-level compatible)
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 125 W
Gambaran Suhu Operasi — -55C to +175C (junction)
RoHS Compliance — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga