IPT030N12N3GATMA1 vs IQE018N06NM6CGATMA1 比較
詳細並排比較 IPT030N12N3GATMA1 由 Infineon 與 IQE018N06NM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT030N12N3GATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Channel Type | N-Channel | N-Channel |
| Configuration | Single | — |
| Maximum Drain-Source Voltage (VDS) | 120 V | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| Maximum Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Maximum On-Resistance (RDS(on)) | 3 mΩ | — |
| Continuous Drain Current (ID) at Ta | 24 A (Ta) | — |
| Pulsed Drain Current (IDM) at Tc | 237 A (Tc) | — |
| Power Dissipation (PD) at Ta | 3.8 W (Ta) | — |
| Power Dissipation (PD) at Tc | 375 W (Tc) | — |
| Technology | OptiMOS 3 | Trench MOSFET, OptiMOS 6 |
| 工作接面溫度 | -55 °C to +175 °C | — |
| 封裝 | PG-HSOF-8-1 (TOLL) | PG-TTFN-9-3 (TOLL/TTFN) |
| 安裝類型 | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (per manufacturer datasheet) | — |
| RoHS 狀態 | Compliant with Exemption | — |
| Channel Mode | Enhancement | — |
| MSL 等級 | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 60V |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | 3.3 V (logic-level compatible) |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| 工作溫度範圍 | — | -55C to +175C (junction) |
| RoHS Compliance | — | Compliant |