IPW60R037P7XKSA1 vs IPL60R065C7AUMA1 Perbandingan
Perbandingan bersamaan detil IPW60R037P7XKSA1 dari Infineon dan IPL60R065C7AUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R037P7XKSA1 | IPL60R065C7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | CoolMOS C7 |
| Tipe Transistor | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Paket | PG-TO247-3 (TO-247-3, through-hole) | — |
| Tipe Mounting | Through Hole | Surface Mount |
| Suhu Hubung Kerja | -55 °C to +150 °C | — |
| Technology | CoolMOS Superjunction (SJ) | — |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| Status RoHS | Compliant | Compliant with Exemption |
| Avalanche Rated | Yes | — |
| Part Status | — | Active |
| FET Type | — | N-Channel |
| Process Technology | — | CoolMOS C7 (Superjunction) |
| Maximum Drain-Source Voltage (V_DS) | — | 600 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 29 A |
| On-Resistance (R_DS(on), typ., V_GS=10V) | — | 65 mΩ |
| Maximum Power Dissipation (P_D, T_C=25°C) | — | 180 W |
| Gate-Source Voltage (V_GS, max) | — | ±20 V |
| Gate-Source Threshold (V_GS(th), typ.) | — | 3.5 V |
| Paket / Case | — | PG-VSON-4-1 (Source-Down) |
| Rentang Suhu Kerja | — | -55 °C to +150 °C (T_J) |
| Automotive Qualified (AEC-Q101) | — | No |
| Total Gate Charge (Q_G, typ.) | — | [DATA_NEEDED: Q_G typ. value] |
| Output Capacitance Stored Energy (E_OSS) | — | [DATA_NEEDED: E_OSS typ. value] |