IPW60R037P7XKSA1 vs IPL60R065C7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R037P7XKSA1 disebabkan oleh Infineon dan IPL60R065C7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPW60R037P7XKSA1 IPL60R065C7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series CoolMOS™ P7 CoolMOS C7
Jenis Transistor N-Channel MOSFET (Superjunction) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, Tc=25 °C) 76 A —
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ —
Power Dissipation (P_D, Tc=25 °C) 255 W —
Gate Threshold Voltage (V_GS(th), typ) 3.5 V —
Kemasan PG-TO247-3 (TO-247-3, through-hole) —
Jenis Pemasangan Through Hole Surface Mount
Suhu Hubungan Operasi -55 °C to +150 °C —
Technology CoolMOS Superjunction (SJ) —
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) —
Status RoHS Compliant Compliant with Exemption
Avalanche Rated Yes —
Part Status — Active
FET Type — N-Channel
Process Technology — CoolMOS C7 (Superjunction)
Maximum Drain-Source Voltage (V_DS) — 600 V
Continuous Drain Current (I_D, T_C=25°C) — 29 A
On-Resistance (R_DS(on), typ., V_GS=10V) — 65 mΩ
Maximum Power Dissipation (P_D, T_C=25°C) — 180 W
Gate-Source Voltage (V_GS, max) — ±20 V
Gate-Source Threshold (V_GS(th), typ.) — 3.5 V
Kemasan / Case — PG-VSON-4-1 (Source-Down)
Gambaran Suhu Operasi — -55 °C to +150 °C (T_J)
Automotive Qualified (AEC-Q101) — No
Total Gate Charge (Q_G, typ.) — [DATA_NEEDED: Q_G typ. value]
Output Capacitance Stored Energy (E_OSS) — [DATA_NEEDED: E_OSS typ. value]

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