IPW60R037P7XKSA1 vs IPW60R190C6FKSA1 Perbandingan
Perbandingan bersamaan detil IPW60R037P7XKSA1 dari Infineon dan IPW60R190C6FKSA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IPW60R037P7XKSA1 | IPW60R190C6FKSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS™ P7 | — |
| Tipe Transistor | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Paket | PG-TO247-3 (TO-247-3, through-hole) | TO-247-3 (PG-TO247-3-1) |
| Tipe Mounting | Through Hole | Through-Hole |
| Suhu Hubung Kerja | -55 °C to +150 °C | -55 °C to +150 °C |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS™ C6 (Superjunction N-channel) |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 20.2 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), max @ VGS=10V) | — | 190 mΩ |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge (Qg, typ @ VDS=480V) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD, Tc=25°C) | — | 151 W |
| Thermal Resistance, Junction-to-Case (RθJC) | — | 0.83 K/W |
| Jumlah Pin | — | 3 (+ tab) |
| Level MSL | — | N/A (through-hole) |