IPW60R037P7XKSA1 vs IPW60R190C6FKSA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPW60R037P7XKSA1 sa pamamagitan ng Infineon at IPW60R190C6FKSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPW60R037P7XKSA1 IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 - 600V 76A CoolMOS P7 MOSFET | Infineon

IPW60R037P7XKSA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPW60R037P7XKSA1 IPW60R190C6FKSA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Series CoolMOS™ P7 —
Uri ng Transistor N-Channel MOSFET (Superjunction) —
Drain-Source Voltage (V_DSS) 600 V —
Continuous Drain Current (I_D, Tc=25 °C) 76 A —
On-Resistance (R_DS(on), max, V_GS=10 V) 37 mΩ —
Power Dissipation (P_D, Tc=25 °C) 255 W —
Gate Threshold Voltage (V_GS(th), typ) 3.5 V —
Packhaging PG-TO247-3 (TO-247-3, through-hole) TO-247-3 (PG-TO247-3-1)
Uri ng Pagpapasok Through Hole Through-Hole
Temperature ng Junction na Operasyon -55 °C to +150 °C -55 °C to +150 °C
Technology CoolMOS Superjunction (SJ) CoolMOS™ C6 (Superjunction N-channel)
Orderable Part Number Suffix XKSA1 (tube packaging, industrial) —
Tindminan RoHS Compliant Compliant
Avalanche Rated Yes —
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc=25°C) — 20.2 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on), max @ VGS=10V) — 190 mΩ
Gate Threshold Voltage (VGS(th), typ) — [DATA_NEEDED: VGS(th) typ]
Total Gate Charge (Qg, typ @ VDS=480V) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD, Tc=25°C) — 151 W
Thermal Resistance, Junction-to-Case (RθJC) — 0.83 K/W
Bilang ng Pin — 3 (+ tab)
Level ng MSL — N/A (through-hole)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita