IQDH29NE2LM5CGSCATMA1 vs IQE022N06LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQDH29NE2LM5CGSCATMA1 dari Infineon dan IQE022N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQDH29NE2LM5CGSCATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 Power-Transistor | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Paket | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9 (5x6 mm) |
| Jumlah Pin | 9 | 9 (PG-WHTFN-9) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (TC) | — | 151 A |
| Continuous Drain Current (TA) | — | 24 A |
| Maximum Power Dissipation (TC) | — | 100 W |
| Maximum Power Dissipation (TA) | — | 2.5 W |
| RDS(on) Maximum at VGS=10V | — | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Rentang Suhu Kerja | — | -55C to +150C |
| Technology Family | — | OptiMOS 5 |