IQDH29NE2LM5CGSCATMA1 vs IQE022N06LM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH29NE2LM5CGSCATMA1 disebabkan oleh Infineon dan IQE022N06LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQDH29NE2LM5CGSCATMA1 | IQE022N06LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 Power-Transistor | — |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 278 W | — |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Kemasan | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHTFN-9 (5x6 mm) |
| Kiraan Pin | 9 | 9 (PG-WHTFN-9) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL Level] |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (TC) | — | 151 A |
| Continuous Drain Current (TA) | — | 24 A |
| Maximum Power Dissipation (TC) | — | 100 W |
| Maximum Power Dissipation (TA) | — | 2.5 W |
| RDS(on) Maximum at VGS=10V | — | 2.2 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V (typ) |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Technology Family | — | OptiMOS 5 |