IQDH35N03LM5SCATMA1 vs IQDH88N06LM5CGSCATMA1 Perbandingan

Perbandingan bersamaan detil IQDH35N03LM5SCATMA1 dari Infineon dan IQDH88N06LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQDH35N03LM5SCATMA1 IQDH88N06LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 5 (trench)
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Paket PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-WHTFN-9-U02 (PQFN 5x6)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 C to +175 C -55°C to +175°C (TJ)
Level MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
Arus Alir Berlanjut (TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
Dissipasi Listrik (TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
Jumlah Pin — 9 (with exposed pad)
Cooling — Dual-side cooling capable
Polarity — N-Channel
Configuration — Single

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IQDH88N06LM5CGSCATMA1

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