IQDH35N03LM5SCATMA1 vs IQDH88N06LM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQDH35N03LM5SCATMA1 disebabkan oleh Infineon dan IQDH88N06LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQDH88N06LM5CGSCATMA1 IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 - 60V N-Ch MOSFET 0.86mΩ | Infineon

IQDH88N06LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQDH35N03LM5SCATMA1 IQDH88N06LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 5 (trench, shielded-gate) OptiMOS 5 (trench)
Drain-Source Voltage (VDS) max 30 V —
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at Ta 66 A —
Pulsed Drain Current (IDM) at Tc 700 A —
On-State Resistance (RDS(on)) max 0.35 mOhm @ VGS=10V —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 278 W —
Kemasan PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin) PG-WHTFN-9-U02 (PQFN 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55 C to +175 C -55°C to +175°C (TJ)
Aras MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Status RoHS Compliant Compliant
Marking IQDH35N03LM5S —
Drain-Source Voltage (V(BR)DSS) — 60 V
Continuous Drain Current (Ta=25°C) — 42 A
Arus Kumpal Tetap (TC=25°C) — 447 A
On-Resistance RDS(on) typical @ VGS=10V — 0.86 mΩ
Power Dissipation (Ta=25°C) — 3 W
Pembuangan Kuasa (TC=25°C) — 333 W
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical]
Gate Charge Qg typical — [DATA_NEEDED: Qg typical nC]
Kiraan Pin — 9 (with exposed pad)
Cooling — Dual-side cooling capable
Polarity — N-Channel
Configuration — Single

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