IQE008N03LM5SCATMA1 vs IQE013N04LM6ATMA1 Perbandingan
Perbandingan bersamaan detil IQE008N03LM5SCATMA1 dari Infineon dan IQE013N04LM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE008N03LM5SCATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 5 | — |
| Technology | Trench MOSFET (N-Channel) | OptiMOS N-channel trench MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) | 252 A | — |
| On-Resistance (RDS(on)) max | 0.85 mΩ at VGS = 10 V | — |
| Gate Threshold Voltage (VGS(th)) | 2 V (typical) | 2 V (typ) |
| Gate Drive Voltage | 10 V (recommended) | — |
| Paket | PG-WHSON-8 (Source-Down) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Configuration | Single N-Channel | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling Architecture | Source-Down, dual-side cooling | — |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55 °C to +175 °C |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |