IQE008N03LM5SCATMA1 vs IQE013N04LM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE008N03LM5SCATMA1 disebabkan oleh Infineon dan IQE013N04LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE008N03LM5SCATMA1 IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 - 30V 0.85mΩ N-Ch MOSFET, PG-WHSON-8

IQE008N03LM5SCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE008N03LM5SCATMA1 IQE013N04LM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 5 —
Technology Trench MOSFET (N-Channel) OptiMOS N-channel trench MOSFET
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) 252 A —
On-Resistance (RDS(on)) max 0.85 mΩ at VGS = 10 V —
Gate Threshold Voltage (VGS(th)) 2 V (typical) 2 V (typ)
Gate Drive Voltage 10 V (recommended) —
Kemasan PG-WHSON-8 (Source-Down) PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down
Configuration Single N-Channel —
Jenis Pemasangan Surface Mount Surface Mount
Cooling Architecture Source-Down, dual-side cooling —
Gambaran Suhu Operasi -55 °C to +150 °C -55 °C to +175 °C
Aras MSL [DATA_NEEDED: MSL rating] —
Status RoHS Compliant Compliant
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Polarity — N-Channel
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (Ta) — 31 A
Continuous Drain Current (Tc) — 205 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
On-Resistance RDS(on) max — [DATA_NEEDED: RDS(on) max value at VGS=10V]
On-Resistance RDS(on) typ — 1.35 mΩ @ VGS=10 V, ID=20 A
Source-Down Topology — Yes (flip-chip die attach, drain on top thermal pad)

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