IQE022N06LM5CGATMA1 vs IQE018N06NM6CGATMA1 Perbandingan
Perbandingan bersamaan detil IQE022N06LM5CGATMA1 dari Infineon dan IQE018N06NM6CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE022N06LM5CGATMA1 | IQE018N06NM6CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 | — |
| Technology | N-Channel Power MOSFET (Enhancement Mode) | Trench MOSFET, OptiMOS 6 |
| Drain-Source Voltage (V_DS) | 60 V | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | 24 A | — |
| Continuous Drain Current (I_D) at T_C=25C | 151 A | — |
| R_DS(on) (typical, V_GS=10V) | 2.2 mΩ | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | 3.3 V (logic-level compatible) |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G value] | — |
| Power Dissipation (T_A) | 2.5 W | — |
| Power Dissipation (T_C) | 100 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +175C (junction) |
| Paket | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) | PG-TTFN-9-3 (TOLL/TTFN) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | 9 (with exposed thermal pad) | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 6 60V |
| Channel Type | — | N-Channel |
| Continuous Drain Current (I_D, Tc) | — | 178 A |
| Continuous Drain Current (I_D, Ta) | — | 25 A |
| R_DS(on) max (V_GS=10 V) | — | 1.8 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 125 W |
| RoHS Compliance | — | Compliant |