IQE036N08NM6ATMA1 vs IAUCN08S7L033ATMA1 Perbandingan

Perbandingan bersamaan detil IQE036N08NM6ATMA1 dari Infineon dan IAUCN08S7L033ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IQE036N08NM6ATMA1 IAUCN08S7L033ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 6 —
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) at Ta 16.7 A —
Continuous Drain Current (ID) at Tc 118 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V [DATA_NEEDED: RDS(on) at VGS=10V] —
On-Resistance RDS(on) typical 3.6 mΩ —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 125 W —
Paket PG-TSON-8-5 (PQFN 3.3x3.3 Source-Down) PG-TDSON-8-34 (SSO8, 5x6 mm²)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55°C to +150°C (junction, per datasheet) -55°C to +175°C (TJ)
Status RoHS Compliant Compliant
Level MSL MSL1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020, typical for this package)
Avalanche Energy Rated Yes (single-pulse, per datasheet) —
Series — Automotive OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 80 V
Maximum On-Resistance (RDS(on)) at VGS=10V — 3.3 mΩ
Continuous Drain Current (ID) at Tj — 130 A
Continuous Drain Current (ID) at Tc=25°C — [DATA_NEEDED: ID at Tc=25C]
Power Dissipation (PD) at Tc=25°C — 118 W
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Gate-Source Voltage (VGS) max — ±20 V (typical Infineon OptiMOS 7 limit)
Qualification — Automotive Grade (per Infineon datasheet header)
Technology — OptiMOS 7 trench MOSFET

Spek dan Sumber

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