IQEH50NE2LM7ZCGATMA1 vs IQD009N06NM5SCATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan IQD009N06NM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7ZCGATMA1 IQD009N06NM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel N-Channel Enhancement Mode
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 150 W 333 W
Maximum Junction Temperature +175 degrees C —
Rentang Suhu Kerja -55 degrees C to +175 degrees C [DATA_NEEDED: Tj min/max]
Paket PG-TTFN-9-3 PG-WHSON-8-U02 (PQFN 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Part Series — OptiMOS 5 60V (IQD009N06NM5)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Ta=25C) — 42 A
Pulsed Drain Current (IDM, Tc) — 445 A
On-Resistance RDS(on) max @ VGS=10V — 0.9 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS abs max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Level MSL — [DATA_NEEDED: MSL classification]
Tape and Reel Packaging — Yes (suffix SCATMA1)

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