IQEH50NE2LM7ZCGATMA1 vs IQD009N06NM5SCATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and IQD009N06NM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Active

Specification Comparison

Parameter IQEH50NE2LM7ZCGATMA1 IQD009N06NM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel N-Channel Enhancement Mode
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 150 W 333 W
Maximum Junction Temperature +175 degrees C —
Operating Temperature Range -55 degrees C to +175 degrees C [DATA_NEEDED: Tj min/max]
Package PG-TTFN-9-3 PG-WHSON-8-U02 (PQFN 5x6 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
RoHS Status Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Part Series — OptiMOS 5 60V (IQD009N06NM5)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Ta=25C) — 42 A
Pulsed Drain Current (IDM, Tc) — 445 A
On-Resistance RDS(on) max @ VGS=10V — 0.9 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS abs max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
MSL Level — [DATA_NEEDED: MSL classification]
Tape and Reel Packaging — Yes (suffix SCATMA1)

Datasheets & Resources

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