IQEH50NE2LM7ZCGATMA1 vs IQD009N06NM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan IQD009N06NM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 - 60V 0.9mOhm N-Ch MOSFET | Infineon

IQD009N06NM5SCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7ZCGATMA1 IQD009N06NM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor —
Polarity / Channel Type N-Channel N-Channel Enhancement Mode
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 150 W 333 W
Maximum Junction Temperature +175 degrees C —
Gambaran Suhu Operasi -55 degrees C to +175 degrees C [DATA_NEEDED: Tj min/max]
Kemasan PG-TTFN-9-3 PG-WHSON-8-U02 (PQFN 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Part Series — OptiMOS 5 60V (IQD009N06NM5)
Drain-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Ta=25C) — 42 A
Pulsed Drain Current (IDM, Tc) — 445 A
On-Resistance RDS(on) max @ VGS=10V — 0.9 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS abs max, typical +/-20V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th) value]
Aras MSL — [DATA_NEEDED: MSL classification]
Tape and Reel Packaging — Yes (suffix SCATMA1)

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