IR2109SPBF vs IR2010SPBF Perbandingan

Perbandingan bersamaan detil IR2109SPBF dari Infineon dan IR2010SPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2109SPBF IR2010SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Driver Configuration Half-Bridge —
Number of Drivers 2 (high-side + low-side) 2 (independent high/low-side outputs)
High-Side Voltage Tolerance 600 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typical) 0.2 A —
Sink Current (typical) 0.35 A —
Turn-On Propagation Delay 150 ns —
Turn-Off Propagation Delay 150 ns —
Waktu naik 200 ns —
Waktu Menurun 50 ns —
Quiescent VCC Current 1 mA —
Input Logic Compatibility 3.3 V / 5 V CMOS / TTL —
Undervoltage Lockout Yes (VCC) —
Bootstrap Diode Integrated —
Suhu Hubung Kerja -40 C to +150 C —
Paket SOIC-8 16-SOIC (SOIC-16)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant (Pb-free PBF suffix)
Configuration — Half-Bridge (high + low side)
Offset Voltage (max) — 200 V
Peak Source/Sink Current — 3 A / 3 A
Logic Input Compatibility — CMOS or LSTTL, down to 3.0 V
Propagation Delay (typ) — 95 ns
Rise / Fall Time (typ) — [DATA_NEEDED: rise/fall time]
VCC Supply Voltage (low side) — 10 V to 20 V
VB Bootstrap Supply (high side) — VCC + 10 V to VCC + 20 V
Suhu Kerja — -40C to +150C
Shutdown Feature — Yes (active input)
Level MSL — [DATA_NEEDED: MSL rating]
Drive Technology — High-speed power MOSFET / IGBT driver
Channel Matching — Matched propagation delays for cross-conduction minimization

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