IRF1310NSTRLPBF vs IPTC039N15NM5ATMA1 Perbandingan

Perbandingan bersamaan detil IRF1310NSTRLPBF dari Infineon dan IPTC039N15NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF1310NSTRLPBF IPTC039N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Tipe Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 73.3 nC —
Power Dissipation (PD) at TC=25C 160 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Rentang Suhu Kerja -55C to +175C —
Paket D2PAK (TO-263AB) PG-HDSOP-16-2 (top-side cooled)
Tipe Mounting Surface Mount Surface Mount
Technology IR MOSFET (HEXFET) OptiMOS 5 trench
Built-in Diode Yes (intrinsic body diode) —
Lead-Free / RoHS Yes (PBF suffix) —
Configuration Single with built-in diode —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Continuous Drain Current (ID) at Ta — 21 A
Continuous Drain Current (ID) at Tc — 190 A
Power Dissipation (PD) at Ta — 3.8 W
Power Dissipation (PD) at Tc — 319 W
On-Resistance RDS(on) typical — 3.9 mOhm
Gate Charge Qg typical — 74 nC
Maximum Gate-Source Voltage (VGS) — 20 V
Suhu Kerja — -55 C to +175 C (junction)
Cooling — Top-side cooled (case above PCB)
Status RoHS — Compliant

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