IRF1310NSTRLPBF vs IPTC039N15NM5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1310NSTRLPBF disebabkan oleh Infineon dan IPTC039N15NM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF1310NSTRLPBF IPTC039N15NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID) at TC=25C 42 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max at VGS=10V 36 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 73.3 nC —
Power Dissipation (PD) at TC=25C 160 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Gambaran Suhu Operasi -55C to +175C —
Kemasan D2PAK (TO-263AB) PG-HDSOP-16-2 (top-side cooled)
Jenis Pemasangan Surface Mount Surface Mount
Technology IR MOSFET (HEXFET) OptiMOS 5 trench
Built-in Diode Yes (intrinsic body diode) —
Lead-Free / RoHS Yes (PBF suffix) —
Configuration Single with built-in diode —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Continuous Drain Current (ID) at Ta — 21 A
Continuous Drain Current (ID) at Tc — 190 A
Power Dissipation (PD) at Ta — 3.8 W
Power Dissipation (PD) at Tc — 319 W
On-Resistance RDS(on) typical — 3.9 mOhm
Gate Charge Qg typical — 74 nC
Maximum Gate-Source Voltage (VGS) — 20 V
Suhu Operasi — -55 C to +175 C (junction)
Cooling — Top-side cooled (case above PCB)
Status RoHS — Compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga