IRF540NSTRLPBF vs IRFZ44NSTRLPBF Perbandingan
Perbandingan bersamaan detil IRF540NSTRLPBF dari Infineon dan IRFZ44NSTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF540NSTRLPBF | IRFZ44NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55C to +175C |
| Paket | D2PAK (TO-263), surface mount | D2PAK (TO-263) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) | — |
| Status RoHS | Compliant (Pb-free) | Compliant |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 49 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Drain-Source On-Resistance RDS(on) max | — | 17.5 mOhm at VGS=10V |
| Total Gate Charge (Qg) | — | 42 nC |
| Power Dissipation (TC) | — | 94 W |
| Power Dissipation (TA) | — | 3.8 W |
| Lead-Free (PBF suffix) | — | Yes |