IRF540NSTRLPBF vs IRFZ44NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF540NSTRLPBF sa pamamagitan ng Infineon at IRFZ44NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF540NSTRLPBF IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF - 100V 33A N-Channel MOSFET D2PAK | Infineon

IRF540NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF540NSTRLPBF IRFZ44NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET
Drain-Source Voltage (Vdss) 100 V —
Continuous Drain Current (Id) at Tc=25C 33 A —
Pulsed Drain Current (Idm) 110 A (per datasheet pulse curve) —
On-Resistance Rds(on) max at Vgs=10V 44 mOhm —
Gate Threshold Voltage Vgs(th) 2.0 V to 4.0 V —
Total Gate Charge Qg 47.3 nC (typical) —
Power Dissipation (Pd) at Tc=25C 130 W —
Hanay ng Temperature na Operasyon -55 C to +175 C -55C to +175C
Packhaging D2PAK (TO-263), surface mount D2PAK (TO-263)
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tape & Reel (13-inch reel) —
Tindminan RoHS Compliant (Pb-free) Compliant
Avalanche Energy Rated Yes (HEXFET ruggedized) —
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 49 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Drain-Source On-Resistance RDS(on) max — 17.5 mOhm at VGS=10V
Total Gate Charge (Qg) — 42 nC
Power Dissipation (TC) — 94 W
Power Dissipation (TA) — 3.8 W
Lead-Free (PBF suffix) — Yes

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