IRF7306TRPBF vs IRF7416TRPBF Perbandingan

Perbandingan bersamaan detil IRF7306TRPBF dari Infineon dan IRF7416TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7306TRPBF IRF7416TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V -30 V
Continuous Drain Current (ID) -3.6 A at 25°C —
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) HEXFET (IR MOSFET)
Rentang Suhu Kerja -55°C to +150°C (junction) —
Paket 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) 8-SO (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
FET Type — P-Channel
Continuous Drain Current (ID) at TA=25C — -10 A
Pulsed Drain Current (IDM) — -50 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — -1 V to -3 V
Total Gate Charge (Qg) — 61 nC
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
Rentang Suhu Hubung Kerja — -55 C to +150 C
Status RoHS — Compliant
Lead-Free — Yes

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon