IRF7306TRPBF vs IRF7416TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7306TRPBF disebabkan oleh Infineon dan IRF7416TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7306TRPBF IRF7416TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel (dual) —
Number of Channels 2 (independent, in single package) —
Drain-to-Source Voltage (VDS) -30 V -30 V
Continuous Drain Current (ID) -3.6 A at 25°C —
On-Resistance RDS(on) max 100 mOhm at VGS = -10 V —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg total] —
Maximum Power Dissipation 2 W at TA = 25°C —
Technology HEXFET Power MOSFET (Generation V) HEXFET (IR MOSFET)
Gambaran Suhu Operasi -55°C to +150°C (junction) —
Kemasan 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width) 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape & Reel (TR) —
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
RoHS Compliance Yes (PBF suffix indicates Pb-free) —
Qualification Consumer market qualification standards (per IR/Infineon datasheet) —
Avalanche Rated Yes (ruggedized device per datasheet) —
FET Type — P-Channel
Continuous Drain Current (ID) at TA=25C — -10 A
Pulsed Drain Current (IDM) — -50 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — -1 V to -3 V
Total Gate Charge (Qg) — 61 nC
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Status RoHS — Compliant
Lead-Free — Yes

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