IRF7309TRPBF vs IRF8736TRPBF Perbandingan

Perbandingan bersamaan detil IRF7309TRPBF dari Infineon dan IRF8736TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7309TRPBF IRF8736TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration Dual N-Channel + P-Channel (Complementary) Single
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V StrongIRFET / HEXFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Rentang Suhu Kerja -55C to +150C (TJ) -55C to +150C (junction)
Paket 8-SO (SOIC-8) SO-8 (8-SO, MS-012AA)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
Status RoHS Compliant —
Packaging Tape & Reel Tape & Reel (TRPBF suffix)
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated — Yes (fully characterized avalanche voltage)

Spek dan Sumber

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