IRF7309TRPBF vs IRF8736TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7309TRPBF disebabkan oleh Infineon dan IRF8736TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7309TRPBF IRF8736TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Configuration Dual N-Channel + P-Channel (Complementary) Single
Polarity N+P —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (N-channel, TA=25C) 4 A —
Continuous Drain Current (P-channel, TA=25C) 3 A —
On-Resistance (N-channel, max) 50 mOhm —
On-Resistance (P-channel, max) [DATA_NEEDED: RDS(on) P-channel value] —
Power Dissipation (TA=25C) 1.4 W —
Technology IR HEXFET Generation V StrongIRFET / HEXFET
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Gambaran Suhu Operasi -55C to +150C (TJ) -55C to +150C (junction)
Kemasan 8-SO (SOIC-8) SO-8 (8-SO, MS-012AA)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL-1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Lead-Free Status Yes (TRPBF suffix = Pb-free) —
Status RoHS Compliant —
Packaging Tape & Reel Tape & Reel (TRPBF suffix)
FET Type — N-Channel
Drain-Source Voltage (VDS) Max — 30 V
Continuous Drain Current (ID) at TA=25C — 18 A
Power Dissipation (PD) Max at TA=25C — 2.5 W
Drain-Source On-Resistance (RDS(on)) Max — 4.8 mOhm at VGS = 10V
Gate Charge (Qg) Typical — 17 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Lead-Free / RoHS — Yes (PBF suffix = lead-free, RoHS compliant)
Avalanche Rated — Yes (fully characterized avalanche voltage)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga