IRF7341GTRPBF vs ISA250300C04LMDSXTMA1 Perbandingan

Perbandingan bersamaan detil IRF7341GTRPBF dari Infineon dan ISA250300C04LMDSXTMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IRF7341GTRPBF ISA250300C04LMDSXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 55 V 40 V
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel Dual N-channel + P-channel (N+P array)
Technology IR HEXFET Planar MOSFET Trench MOSFET (OptiMOS 3)
Paket 8-SO (SOIC-8) SO-8 (PG-DSO-8-920)
Tipe Mounting Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) range per channel]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Rentang Suhu Kerja -55 C to +175 C [DATA_NEEDED: operating temperature range]
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current N-channel — 5.9 A (Ta), 7.9 A (Tc)
Continuous Drain Current P-channel — 5.8 A (Ta), 7.8 A (Tc)
Power Dissipation — 1.4 W (Ta), 2.5 W (Tc)
Packaging — Tape & Reel (suffix XTMA1)
Datasheet Document — Infineon ISA250300C04LMDS datasheet (per Infineon product page)
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) per channel at specified VGS]

Spek dan Sumber

ISA250300C04LMDSXTMA1

📄 Lihat Spek

Lihat Selengkapnya →

Buka Semua Produk Buat BOM Ajukan Diskon