IRF7341GTRPBF vs ISA250300C04LMDSXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7341GTRPBF disebabkan oleh Infineon dan ISA250300C04LMDSXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon

ISA250300C04LMDSXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF7341GTRPBF ISA250300C04LMDSXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 55 V 40 V
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel Dual N-channel + P-channel (N+P array)
Technology IR HEXFET Planar MOSFET Trench MOSFET (OptiMOS 3)
Kemasan 8-SO (SOIC-8) SO-8 (PG-DSO-8-920)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] [DATA_NEEDED: VGS(th) range per channel]
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55 C to +175 C [DATA_NEEDED: operating temperature range]
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) Yes
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Continuous Drain Current N-channel — 5.9 A (Ta), 7.9 A (Tc)
Continuous Drain Current P-channel — 5.8 A (Ta), 7.8 A (Tc)
Power Dissipation — 1.4 W (Ta), 2.5 W (Tc)
Packaging — Tape & Reel (suffix XTMA1)
Datasheet Document — Infineon ISA250300C04LMDS datasheet (per Infineon product page)
On-Resistance RDS(on) — [DATA_NEEDED: RDS(on) per channel at specified VGS]

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