IRF7341GTRPBF vs ISA250300C04LMDSXTMA1 比較
詳細並排比較 IRF7341GTRPBF 由 Infineon 與 ISA250300C04LMDSXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISA250300C04LMDSXTMA1 - 40V Dual N+P OptiMOS 3 MOSFET | Infineon
ISA250300C04LMDSXTMA1 ✓ 啟用中規格比較
| 參數 | IRF7341GTRPBF | ISA250300C04LMDSXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 55 V | 40 V |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-channel + P-channel (N+P array) |
| Technology | IR HEXFET Planar MOSFET | Trench MOSFET (OptiMOS 3) |
| 封裝 | 8-SO (SOIC-8) | SO-8 (PG-DSO-8-920) |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) range per channel] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 工作溫度範圍 | -55 C to +175 C | [DATA_NEEDED: operating temperature range] |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| Continuous Drain Current N-channel | — | 5.9 A (Ta), 7.9 A (Tc) |
| Continuous Drain Current P-channel | — | 5.8 A (Ta), 7.8 A (Tc) |
| Power Dissipation | — | 1.4 W (Ta), 2.5 W (Tc) |
| Packaging | — | Tape & Reel (suffix XTMA1) |
| Datasheet Document | — | Infineon ISA250300C04LMDS datasheet (per Infineon product page) |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) per channel at specified VGS] |