IRF7416TRPBF vs IRFH5020TRPBF Perbandingan

Perbandingan bersamaan detil IRF7416TRPBF dari Infineon dan IRFH5020TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7416TRPBF IRFH5020TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel MOSFET N-Channel, Metal Oxide
Technology HEXFET (IR MOSFET) —
Drain-to-Source Voltage (VDS) -30 V 200 V
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A 63 A
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] ±20 V
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC —
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket 8-SO (SOIC-8) —
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Level MSL 1 (unlimited) 1 (per industry standard for PQFN-8)
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Family — HEXFET Power MOSFET
Configuration — Single with built-in diode
Continuous Drain Current (ID) at TA=25°C — 5.1 A
RDS(on) max at VGS=10V — 55 mΩ
Gate Charge (Qg) typ — 11 nC
Power Dissipation (TA=25°C) — 3.6 W
Dissipasi Listrik (TC=25°C) — 8.3 W
Thermal Resistance, Junction-to-PCB (RthJB) — 0.8 °C/W
Package Type — 8-PQFN (5x6 mm) SuperSO8
Profile Height — ≤ 0.9 mm
Rentang Suhu Kerja — -55 °C to +150 °C (TJ max)
Qualification Standard — JEDEC (Normal level)
Gate Drive Optimization — 10 V VGS
RoHS Compliance — Compliant (Pb-free suffix PBF)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon