IRF7416TRPBF vs IRLH5030TRPBF Perbandingan

Perbandingan bersamaan detil IRF7416TRPBF dari Infineon dan IRLH5030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7416TRPBF IRLH5030TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel N-Channel
Technology HEXFET (IR MOSFET) IR MOSFET (HEXFET)
Drain-to-Source Voltage (VDS) -30 V 100 V
Continuous Drain Current (ID) at TA=25C -10 A 13 A
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC 44 nC
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
Rentang Suhu Hubung Kerja -55 C to +150 C —
Paket 8-SO (SOIC-8) PQFN-8 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Level MSL 1 (unlimited) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRLH5030TRPBF
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 9 mOhm
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)
Power Dissipation at TA=25C — 3.6 W
Power Dissipation at TC=25C — 156 W
Thermal Resistance to PCB (RthJC) — 0.8 C/W
Profile Height — ≤ 0.9 mm
Qualification — JEDEC standard
Rg Tested — 100%
RoHS Compliance — Compliant (Lead-free, Bromide-free, Halogen-free)
Industry-Standard Pinout — Yes

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