IRF7416TRPBF vs IRLH5030TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7416TRPBF disebabkan oleh Infineon dan IRLH5030TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7416TRPBF | IRLH5030TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET) | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | -30 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | -10 A | 13 A |
| Pulsed Drain Current (IDM) | -50 A | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 20 mOhm at VGS = -10 V | — |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | -1 V to -3 V | — |
| Total Gate Charge (Qg) | 61 nC | 44 nC |
| Power Dissipation (PD) max at TA=25C | 2.5 W | — |
| Thermal Resistance, Junction-to-Ambient (RthJA) | 50 C/W | — |
| Gambaran Suhu Hubungan Operasi | -55 C to +150 C | — |
| Kemasan | 8-SO (SOIC-8) | PQFN-8 (SuperSO8 5x6 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Aras MSL | 1 (unlimited) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLH5030TRPBF |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| On-Resistance RDS(on) max at VGS=10V | — | 9 mOhm |
| Gate Drive Voltage (optimized) | — | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | — | 3.6 W |
| Power Dissipation at TC=25C | — | 156 W |
| Thermal Resistance to PCB (RthJC) | — | 0.8 C/W |
| Profile Height | — | ≤ 0.9 mm |
| Qualification | — | JEDEC standard |
| Rg Tested | — | 100% |
| RoHS Compliance | — | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | — | Yes |