IRF7854TRPBF vs IRFH5301TRPBF Perbandingan
Perbandingan bersamaan detil IRF7854TRPBF dari Infineon dan IRFH5301TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7854TRPBF | IRFH5301TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0,48 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Paket | SO-8 | PQFN (5x6 mm) Single Die |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | HEXFET (StrongIRFET) |
| Rentang Suhu Kerja | -55°C to +150°C (TJ) | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | JEDEC standard |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (TA, 25C) | — | 35 A |
| Continuous Drain Current (TC, 25C) | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 1.85 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | 37 nC (typical) |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 110 W |
| Gate Drive Logic Level | — | Optimized for 5 V VGS drive |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |