IRF7854TRPBF vs IRFH5301TRPBF 比較
詳細並排比較 IRF7854TRPBF 由 Infineon 與 IRFH5301TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7854TRPBF | IRFH5301TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $0.48 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| 封裝 | SO-8 | PQFN (5x6 mm) Single Die |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | HEXFET (StrongIRFET) |
| 工作溫度範圍 | -55°C to +150°C (TJ) | -55C to +150C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | JEDEC standard |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (TA, 25C) | — | 35 A |
| Continuous Drain Current (TC, 25C) | — | 100 A |
| RDS(on) Max @ VGS=10V | — | 1.85 mOhm |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge (Qg) | — | 37 nC (typical) |
| Power Dissipation (TA) | — | 3.6 W |
| Power Dissipation (TC) | — | 110 W |
| Gate Drive Logic Level | — | Optimized for 5 V VGS drive |
| RoHS / Halogen-Free | — | RoHS compliant, Halogen-free |