IRF8736TRPBF vs IRF8736PBF Perbandingan

Perbandingan bersamaan detil IRF8736TRPBF dari Infineon dan IRF8736PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF8736TRPBF IRF8736PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET / HEXFET —
Drain-Source Voltage (VDS) Max 30 V —
Continuous Drain Current (ID) at TA=25C 18 A —
Power Dissipation (PD) Max at TA=25C 2.5 W —
Drain-Source On-Resistance (RDS(on)) Max 4.8 mOhm at VGS = 10V —
Gate Charge (Qg) Typical 17 nC —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Paket SO-8 (8-SO, MS-012AA) SO-8 (8-SO)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55°C to +150°C (junction)
Lead-Free / RoHS Yes (PBF suffix = lead-free, RoHS compliant) —
Level MSL 1 (per JEDEC J-STD-020) 1 (Unlimited)
Avalanche Rated Yes (fully characterized avalanche voltage) Yes (fully characterized avalanche voltage and current)
Configuration Single —
Packaging Tape & Reel (TRPBF suffix) —
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TA=70°C — [DATA_NEEDED: ID at TA=70°C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) at VGS=10V — 4.8 mΩ
On-Resistance RDS(on) at VGS=4.5V — 6.0 mΩ (typical)
Gate-Source Threshold Voltage VGS(th) — Logic-level (optimized for 5 V drive)
Total Gate Charge Qg — 17 nC (typical)
Maximum Power Dissipation at TA=25°C — 2.5 W
RoHS / Lead-Free — Lead-Free, RoHS3 Compliant
Qualification Standard — JEDEC

Spek dan Sumber

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