IRF9540NPBF vs IRF9Z24NPBF Perbandingan
Perbandingan bersamaan detil IRF9540NPBF dari Infineon dan IRF9Z24NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF9540NPBF | IRF9Z24NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRF9540NPBF | — |
| Tipe Transistor | P-Channel MOSFET (HEXFET Power MOSFET) | — |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at Tc | -23 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | +/-20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=-10V | 117 mOhm | — |
| Total Gate Charge (Qg) | 64.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 140 W | — |
| Rentang Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket / Case | TO-220AB (through-hole, 3 pins + tab) | — |
| Tipe Mounting | Through Hole | Through Hole |
| Process Technology | Planar HEXFET cell structure | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (Pb-free matte tin plating) | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (Vdss) | — | -55 V |
| Continuous Drain Current (Id) @ Tc=25C | — | -12 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (Vgs) max | — | ±20 V |
| Rds(on) max @ Vgs=-10V | — | 0.175 ohm |
| Gate Charge (Qg) typ | — | 12.7 nC |
| Power Dissipation (Pd) @ Tc=25C | — | 45 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.67 C/W |
| Suhu Hubung Kerja | — | -55C to +175C |
| Paket | — | TO-220AB (3-pin) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Gate Threshold Voltage (Vgs(th)) typ | — | [DATA_NEEDED: Vgs(th)] |
| Avalanche Energy Rated | — | Yes (single-pulse) |
| Technology | — | HEXFET (planar DMOS, Gen 5) |