IRFB3207ZPBF vs IRFB4127PBF Perbandingan

Perbandingan bersamaan detil IRFB3207ZPBF dari Infineon dan IRFB4127PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB3207ZPBF IRFB4127PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF IRFB4127PBF
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) TrenchFET Gen 6 (HEXFET)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubung Kerja -55 C to +175 C -55C to +175C
Paket TO-220AB (3-lead through-hole) —
Tipe Mounting Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Level MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 200 V
Continuous Drain Current (Id) at Tc — 76 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Drain-Source On-Resistance (Rds(on)) max — 20 mOhm
Total Gate Charge (Qg) — 100 nC
Power Dissipation (Pd) at Tc — 375 W
Paket / Case — TO-220AB (through-hole)
Status RoHS — Lead-Free (PBF suffix indicates RoHS compliance)
Configuration — Single

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