IRFB3207ZPBF vs IRFB4127PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3207ZPBF disebabkan oleh Infineon dan IRFB4127PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3207ZPBF IRFB4127PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF IRFB4127PBF
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) TrenchFET Gen 6 (HEXFET)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubungan Operasi -55 C to +175 C -55C to +175C
Kemasan TO-220AB (3-lead through-hole) —
Jenis Pemasangan Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Aras MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 200 V
Continuous Drain Current (Id) at Tc — 76 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Drain-Source On-Resistance (Rds(on)) max — 20 mOhm
Total Gate Charge (Qg) — 100 nC
Power Dissipation (Pd) at Tc — 375 W
Kemasan / Case — TO-220AB (through-hole)
Status RoHS — Lead-Free (PBF suffix indicates RoHS compliance)
Configuration — Single

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