IRFB3207ZPBF vs IRFB4127PBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB3207ZPBF tarafından Infineon ve IRFB4127PBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB3207ZPBF IRFB4127PBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF IRFB4127PBF
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) TrenchFET Gen 6 (HEXFET)
Drain-Source Voltage (VDS) 75 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
İşletim Jant Sıcaklığı -55 C to +175 C -55C to +175C
Paket TO-220AB (3-lead through-hole) —
Montaj Türü Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
MSL Seviyesi N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
Channel Type — N-Channel
Drain-Source Voltage (Vdss) — 200 V
Continuous Drain Current (Id) at Tc — 76 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max — ±20 V
Drain-Source On-Resistance (Rds(on)) max — 20 mOhm
Total Gate Charge (Qg) — 100 nC
Power Dissipation (Pd) at Tc — 375 W
Paket / Kas — TO-220AB (through-hole)
RoHS Durumu — Lead-Free (PBF suffix indicates RoHS compliance)
Configuration — Single

Dökümanlar & Kaynaklar

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