IRFB3306PBF vs IRFS3306PBF Perbandingan

Perbandingan bersamaan detil IRFB3306PBF dari Infineon dan IRFS3306PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB3306PBF IRFS3306PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25°C 120 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Rds(on) max @ Vgs=10V 4.2 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] 85 nC
Gate-Drain Charge (Qgd) typ 26 nC (nominal) —
Power Dissipation (Pd) at Tc=25°C 230 W —
Suhu Hubung Kerja -55°C to +175°C -55C to +175C
Paket TO-220AB (through-hole) D2PAK (TO-263AB) surface mount
Tipe Mounting Through Hole Surface Mount
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) —
Avalanche Rated Yes —
Body Diode Intrinsic (avalanche-rated) —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 120 A (package limited)
Continuous Drain Current (ID, silicon limited) — 160 A
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
On-Resistance RDS(on) max @ VGS=10V — 4.2 mOhm
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
Gate-to-Drain Charge (Qgd) typ — [DATA_NEEDED: Qgd nominal value]
Power Dissipation (Pd) max @ Tc=25C — 230 W
Level MSL — 1 (per JEDEC J-STD-020)
Lead-Free / RoHS — PbF (lead-free), RoHS compliant

Spek dan Sumber

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