IRFB3306PBF vs IRFS3306PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3306PBF sa pamamagitan ng Infineon at IRFS3306PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB3306PBF IRFS3306PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25°C 120 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Rds(on) max @ Vgs=10V 4.2 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] 85 nC
Gate-Drain Charge (Qgd) typ 26 nC (nominal) —
Power Dissipation (Pd) at Tc=25°C 230 W —
Temperature ng Junction na Operasyon -55°C to +175°C -55C to +175C
Packhaging TO-220AB (through-hole) D2PAK (TO-263AB) surface mount
Uri ng Pagpapasok Through Hole Surface Mount
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) —
Avalanche Rated Yes —
Body Diode Intrinsic (avalanche-rated) —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 120 A (package limited)
Continuous Drain Current (ID, silicon limited) — 160 A
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
On-Resistance RDS(on) max @ VGS=10V — 4.2 mOhm
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
Gate-to-Drain Charge (Qgd) typ — [DATA_NEEDED: Qgd nominal value]
Power Dissipation (Pd) max @ Tc=25C — 230 W
Level ng MSL — 1 (per JEDEC J-STD-020)
Lead-Free / RoHS — PbF (lead-free), RoHS compliant

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