IRFB3306PBF vs IRFS3306PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3306PBF disebabkan oleh Infineon dan IRFS3306PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3306PBF IRFS3306PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25°C 120 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Rds(on) max @ Vgs=10V 4.2 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] 85 nC
Gate-Drain Charge (Qgd) typ 26 nC (nominal) —
Power Dissipation (Pd) at Tc=25°C 230 W —
Suhu Hubungan Operasi -55°C to +175°C -55C to +175C
Kemasan TO-220AB (through-hole) D2PAK (TO-263AB) surface mount
Jenis Pemasangan Through Hole Surface Mount
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) —
Avalanche Rated Yes —
Body Diode Intrinsic (avalanche-rated) —
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID, Tc) — 120 A (package limited)
Continuous Drain Current (ID, silicon limited) — 160 A
Gate-to-Source Voltage (VGS) — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
On-Resistance RDS(on) max @ VGS=10V — 4.2 mOhm
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
Gate-to-Drain Charge (Qgd) typ — [DATA_NEEDED: Qgd nominal value]
Power Dissipation (Pd) max @ Tc=25C — 230 W
Aras MSL — 1 (per JEDEC J-STD-020)
Lead-Free / RoHS — PbF (lead-free), RoHS compliant

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga