IRFB3306PBF vs IRFS3306PBF مقایسه
مقایسه دقیق کنار به کنار IRFB3306PBF توسط Infineon و IRFS3306PBF توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IRFB3306PBF | IRFS3306PBF |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| FET Type | N-Channel | N-Channel |
| Technology | IR HEXFET (MOSFET) | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) at Tc=25°C | 120 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Rds(on) max @ Vgs=10V | 4.2 mΩ | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge Qg] | 85 nC |
| Gate-Drain Charge (Qgd) typ | 26 nC (nominal) | — |
| Power Dissipation (Pd) at Tc=25°C | 230 W | — |
| دمای اتصال کاری | -55°C to +175°C | -55C to +175C |
| بسته‌بندی | TO-220AB (through-hole) | D2PAK (TO-263AB) surface mount |
| نوع نصب | Through Hole | Surface Mount |
| RoHS / Lead-Free (PbF) | Yes (PbF suffix indicates lead-free, RoHS compliant) | — |
| Avalanche Rated | Yes | — |
| Body Diode | Intrinsic (avalanche-rated) | — |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID, Tc) | — | 120 A (package limited) |
| Continuous Drain Current (ID, silicon limited) | — | 160 A |
| Gate-to-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th)] |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.2 mOhm |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| Gate-to-Drain Charge (Qgd) typ | — | [DATA_NEEDED: Qgd nominal value] |
| Power Dissipation (Pd) max @ Tc=25C | — | 230 W |
| سطح MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free / RoHS | — | PbF (lead-free), RoHS compliant |