IRFB4127PBF vs IRFB3207ZPBF Perbandingan

Perbandingan bersamaan detil IRFB4127PBF dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB4127PBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRFB4127PBF IRFB3207ZPBF
Technology TrenchFET Gen 6 (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 200 V —
Continuous Drain Current (Id) at Tc 76 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Drain-Source On-Resistance (Rds(on)) max 20 mOhm —
Total Gate Charge (Qg) 100 nC —
Power Dissipation (Pd) at Tc 375 W —
Suhu Hubung Kerja -55C to +175C -55 C to +175 C
Paket / Case TO-220AB (through-hole) —
Tipe Mounting Through Hole Through Hole
Status RoHS Lead-Free (PBF suffix indicates RoHS compliance) —
Configuration Single —
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Paket — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Level MSL — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Spek dan Sumber

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