IRFB4127PBF vs IRFB3207ZPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB4127PBF tarafından Infineon ve IRFB3207ZPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB4127PBF IRFB3207ZPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRFB4127PBF IRFB3207ZPBF
Technology TrenchFET Gen 6 (HEXFET) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 200 V —
Continuous Drain Current (Id) at Tc 76 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Drain-Source On-Resistance (Rds(on)) max 20 mOhm —
Total Gate Charge (Qg) 100 nC —
Power Dissipation (Pd) at Tc 375 W —
İşletim Jant Sıcaklığı -55C to +175C -55 C to +175 C
Paket / Kas TO-220AB (through-hole) —
Montaj Türü Through Hole Through Hole
RoHS Durumu Lead-Free (PBF suffix indicates RoHS compliance) —
Configuration Single —
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Paket — TO-220AB (3-lead through-hole)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL Seviyesi — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Dökümanlar & Kaynaklar

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