IRFB4127PBF vs IRFB7545PBF Perbandingan
Perbandingan bersamaan detil IRFB4127PBF dari Infineon dan IRFB7545PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFB4127PBF | IRFB7545PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFB4127PBF | IRFB7545PBF |
| Technology | TrenchFET Gen 6 (HEXFET) | StrongIRFET™ (HEXFET, N-Channel) |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vdss) | 200 V | — |
| Continuous Drain Current (Id) at Tc | 76 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (Vgs) max | ±20 V | — |
| Drain-Source On-Resistance (Rds(on)) max | 20 mOhm | — |
| Total Gate Charge (Qg) | 100 nC | — |
| Power Dissipation (Pd) at Tc | 375 W | — |
| Suhu Hubung Kerja | -55C to +175C | -55C to +175C |
| Paket / Case | TO-220AB (through-hole) | — |
| Tipe Mounting | Through Hole | Through Hole (THT) |
| Status RoHS | Lead-Free (PBF suffix indicates RoHS compliance) | — |
| Configuration | Single | — |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Pulsed Drain Current (IDM) | — | 380 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Paket | — | TO-220AB (Through-Hole) |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| Level MSL | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |