IRFB4127PBF vs IRFB7545PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4127PBF sa pamamagitan ng Infineon at IRFB7545PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4127PBF IRFB7545PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number IRFB4127PBF IRFB7545PBF
Technology TrenchFET Gen 6 (HEXFET) StrongIRFET™ (HEXFET, N-Channel)
Channel Type N-Channel —
Drain-Source Voltage (Vdss) 200 V —
Continuous Drain Current (Id) at Tc 76 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (Vgs) max ±20 V —
Drain-Source On-Resistance (Rds(on)) max 20 mOhm —
Total Gate Charge (Qg) 100 nC —
Power Dissipation (Pd) at Tc 375 W —
Temperature ng Junction na Operasyon -55C to +175C -55C to +175C
Packhaging / Kaso TO-220AB (through-hole) —
Uri ng Pagpapasok Through Hole Through Hole (THT)
Tindminan RoHS Lead-Free (PBF suffix indicates RoHS compliance) —
Configuration Single —
Polarity — N-Channel
VDS (Drain-Source Voltage) max — 60 V
VGS (Gate-Source Voltage) max — ±20 V
RDS(on) max at VGS=10V — 5.9 mOhm
Continuous Drain Current (ID) at Tc=25C — 95 A
Pulsed Drain Current (IDM) — 380 A
Single-Pulse Avalanche Current (IAS) — 57 A
Power Dissipation (PD) at Tc=25C — 125 W
Thermal Resistance Junction-to-Case (RthJC) — 1.0 C/W
Packhaging — TO-220AB (Through-Hole)
Lead-Free / RoHS — Yes (Lead-Free, PBF suffix)
Level ng MSL — N/A (Through-Hole)
Gate Drive Voltage (typical) — 10 V
Avalanche Energy Rated — Yes

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